Infineon IRFZ48NPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 14 Milliohms,ID 64A,TO-220AB,PD 130W,gFS 24S
Mfr. Part #: IRFZ48NPBF / RS Stock #: 70017058
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
1
$1.01
5
$0.93
10
$0.89
100
$0.81
250
$0.76
500
$0.66
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Single
Dimensions
0.65 in H X 0.00 in W X 0.42 in L
Drain Current
64 Amp
Drain to Source On Resistance
14 mOhms
Drain to Source Voltage
55 V
Forward Transconductance
24 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
20 V
Input Capacitance
1970 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
130 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
81 nC
Turn Off Delay Time
34 ns
Turn On Delay Time
12 ns
Typical Gate Charge @ Vgs
Maximum of 81 nC @ 10 V
Voltage, Breakdown, Drain to Source
55 V
Overview
N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
